Published: 20 March 2012 - Michelle Winny
A new family of ultra-high-efficiency, high-speed MOSFETs has been released by Toshiba Electronics Europe (TEE).
The devices deliver improvements in low on resistance (RDS(ON)) and low input capacitance (Ciss).
The new trench MOSFET series has voltage ratings from 60V to 120V allowing designers to reduce the size and improve the efficiency and performance of secondary synchronous rectification in switch mode power supplies.
To develop the devices the company used its eighth generation N-channel U-MOSVIII-H process, enabling the reduction of the RDS(ON) Ciss 'figure of merit' by up to 42 percent.
This improves overall efficiency by driving down both conduction and drive losses at the same time as significantly improving switching speeds. The new process technology also helps to minimise radiated noise.
Among the first devices to be launched in the new family are the TK100E08N1 and TK100E10N1 in TO-220 packages and the TK100A08N1 and TK100A10N1 in TO-220SIS 'smart isolation' package formats. Enter 216
Toshiba Electronics Europe