New 8 x 8mm addition to Nexperia’s LFPAK MOSFET family delivers up to 48x power density
Published: 13 May 2019 - Rachael Morling
Nexperia, the global leader in discretes, logic and MOSFET devices, has announced a new package in its MOSFET and LFPAK family which, when combined with its latest silicon technology, results in 40V MOSFETs delivering a low RDS(on) of 0.7 mO. LFPAK88 devices replace larger power packages such as D²PAK and D²PAK-7, and measuring 8 x 8 mm offer a footprint reduction of 60 %, and a 64 % lower profile.
The LFPAK88 devices employ the copper-clip and solder die attach construction, resulting in low electrical & thermal resistance, good current spreading and heat dispersal. In addition, the thermal mass of the copper-clip also reduces hot-spot formation which results in improved avalanche energy (Eas) and linear-mode (SOA) performance. The combination of high continuous and demonstrated current rating ID(max) of 425 A and low RDS(on) of 0.7 mO in a smaller package size, presents market-leading power density of up to 48 times when compared to D2PAK devices.
Finally, the LFPAK88, with its low-stress gull wing leads is a more rugged and thermally robust package, delivering reliability levels more than two times better than is required by AEC-Q101.
LFPAK88 MOSFETs are available in both automotive-qualified (BUK) and industrial (PSMN) grades. Automotive applications include braking, power steering, reverse battery protection and DC-DC converters, where the space-savings that can be achieved by using the devices is particularly useful in dual-redundant circuits. Industrial applications include battery-powered power tools, professional power supplies, and telecoms infrastructure equipment.