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Nexperia releases a new low RDS(on) power MOSFET

Published: 29 January 2020 - Christian Lynn

Nexperia has announced the release of its lowest-ever RDS(on) power MOSFET: the PSMNR51-25YLH sets a standard of 0.57mO at 25V. Utilising Nexperia’s unique NextPowerS3 technology, this performance is offered without compromising other important parameters such as maximum drain current (ID(max)), safe operating area (SOA) or gate charge QG.

Very low RDS(on) devices are required in many applications such as ORing, hot-swap operation, synchronous rectification, motor control and battery protection, to reduce I²R losses and increase efficiency. However, some competing devices with similar RDS(on) values suffer from reduced SOA – a measure of the ruggedness of the MOSFET – and reduced ID(max)) ratings due to shrinking cell-pitches. Nexperia’s PSMNR51-25YLH MOSFET offers a maximum drain current rating up to 380A. This parameter is especially important in motor control applications, where motor-stall can result in high current surges for short periods, which the MOSFET must withstand for safe and reliable operation. Some competitors provide only computed ID(max) whereas Nexperia demonstrates continuous current capability up to 380A.

The device is packaged in LFPAK56, Nexperia’s 5mm x 6mm Power-SO8 compatible package, offering a high performance copper-clip construction which absorbs thermal stresses, increasing quality & lifetime reliability.

Steven Waterhouse, product manager for Power MOSFETs at Nexperia, said: “Our latest NextPowerS3 MOSFETs mean power engineers now have more options than ever before to build new products – batteries can last longer, motors can deliver more torque, servers can be more reliable.”

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