Site search Advanced

New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations maximises efficiency and improves safety

Published: 2 March 2019 - Sarah Mead

Power Integrations, the leader in gate-driver technology for medium and high-voltage inverter applications, has announced the SIC1182K SCALE-iDriver, a high-efficiency, single-channel SiC MOSFET gate driver that delivers the highest peak output gate current available without an external boost stage. Devices can be configured to support different gate-drive voltage requirements matching the range of requirements seen in SiC MOSFETs today and include advanced safety features making them both compact and robust.

The SIC1182K offers up to 8A output at a junction temperature of 125°C allowing these devices to support SiC-MOSFET inverter designs up to several hundred kilowatts without a booster stage. This results in high system efficiency and enables customers to produce only one design to cover their entire product portfolio of differently-rated power inverters. A switching frequency of up to 150kHz supports multiple applications. 

SCALE-iDriver SIC1182K SiC gate drivers feature Power Integrations’ high speed communications FluxLink technology, dramatically improving isolation capability. FluxLink is a revolution in signal transmission replacing optocouplers and capacitive or silicon-based solutions, significantly improving reliability and delivers reinforced isolation up to 1200V. SCALE-iDriver devices also include system-critical protection features such as desaturation monitoring and current SENSE read out, primary and secondary undervoltage lock-out (UVLO) and Advanced Active Clamping (AAC). More, the protection circuits provide safe shut down within five microseconds, meeting the fast protection needs of SiC devices. SIC1182K SiC gate drivers exhibit high external magnetic field immunity, featuring a package that provides =9.5mm of creepage and clearance, using material that has the highest CTI level, CTI600, to IEC60112.

Comments Michael Hornkamp, senior director of marketing for gate-driver products at Power Integrations: “Silicon Carbide MOSFET technology opens the door for decreasing size, lower weight and reduced losses in power inverter systems. The SCALE-iDriver family pairing with FluxLink technology enables safe, cost-effective designs for inverters with very few external components up to 100kW, ensuring functional safety as well as compact packaging and maximised efficiency. Key applications include UPS, photo-voltaic systems, servo drives, welding inverters and power supplies.”

SCALE-iDriver technology minimises the number of external components that are needed and reduces the BOM: tantalum or electrolytic capacitors are not required; only one secondary winding is needed. A two-layer-PCB can be used which increases design simplicity, cuts component count and eases supply chain management.

Power Integrations’ SCALE-iDriver SIC1182K SiC gate drivers meet IEC60664-1 isolation coordination for low voltage equipment below 1000 V and IEC61800-5-1 electric motor drive inverter regulations. UL 1577, 5kVAC for one min, is pending and VDE0884-10 is in process.

Devices are available now, priced at $4.65 in 10,000 piece quantities. Technical information is available from the Power Integrations website at

Search for a product/supplier:
-September 2019+