Nexperia launches lowest RDS(on) automotive MOSFETs down to 0.9 mO
Published: 7 June 2018 - Sarah Mead
High efficiency saves space and system cost; ultra-reliable for safety-critical designs.
Nexperia, the global leader in discretes, logic and MOSFET devices, today announced the release of the company’s lowest RDS(on) automotive-qualified MOSFETs. The AEC-Q101 Trench 9, 40 V automotive superjunction MOSFETs in the rugged, electrically- and thermally-efficient LFPAK56E deliver a footprint reduction of up to 81% when compared to traditional solutions such as bare die modules, D2PAK or D2PAK-7 devices. The 0.9 mO, 220 A DC-rated BUK9J0R9-40H MOSFET suits applications up to 1.2 kW, and is also lower cost than larger D2PAK devices which were the previous best solution.
As well as reducing RDS(on) the new devices also feature an improved DC current rating of 220 A – a first for the automotive Power-SO8 footprint. This enables higher power density on a small footprint, which is especially valuable for safety-critical automotive applications that require dual redundant circuitry. The use of Superjunction technology delivers a higher Avalanche capability and Safe Operating Area for improved performance under fault conditions.
Comments Norman Stapelberg, Product Marketing Manager: “Nexperia is the only company with a low voltage Superjunction MOSFET platform. In terms of overall reliability and performance, Nexperia is the market leader - the rugged Trench 9 superjunction technology combined with the ultra-robust LFPAK56 and LFPAK56E packages gives the engineers the confidence to use this device in their safety-critical designs.”
LFPAK56 Trench 9 MOSFETs facilitate easy paralleling for high current applications. Devices suit automotive functions such as motor control (brushed and brushless) for power steering, transmission control, ABS, ESC, pumps (water, oil and fuel), fan speed control, reverse battery protection and DC/DC converters.